kw.\*:("ION BEAM SPUTTERING")
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INITIAL STAGE OF SPUTTERING IN SILICON OXIDEHATTORI T; HISAJIMA Y; SAITO H et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 244-246; BIBL. 8 REF.Article
TARGET EROSION PATTERN IN PLANAR MAGNETRON SPUTTERINGFUKAMI T; SAKUMA T.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 12; PP. 1680-1683; BIBL. 6 REF.Article
PROPRIETES DES REVETEMENTS A BISULFURE DE MOLYBDENE DEPOSES PAR PULVERISATION IONIQUENOZHENKOV MV.1982; MASINOVEDENIE; ISSN 0025-4576; SUN; DA. 1982; NO 6; PP. 92-96; BIBL. 4 REF.Article
A SIMPLE MEASURING METHOD FOR THE CHARACTERISTIC CURVE OF S(THETA ) COS THETA /S(O)KOWALSKI ZW.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 12; PP. 3512-3513; BIBL. 13 REF.Article
ON RESOLVING THE ANOMALY OF INDIUM-TIN OXIDE SILICON JUNCTIONSASHOK S; FONASH SJ; SINGH R et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 184-186; BIBL. 12 REF.Article
A FIRST ORDER DIFFUSION APPROXIMATION TO ATOMIC REDISTRIBUTION DURING ION BOMBARDMENT OF SOLIDS. II: FINITE RANGE APPROXIMATIONCARTER G; COLLINS R; THOMPSON DA et al.1981; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1981; VOL. 55; NO 1-2; PP. 99-110; BIBL. 16 REF.Article
THE DEVELOPMENT OF SURFACE MORPHOLOGY DURING SPUTTERING WITH SPATIALLY NON-UNIFORM ION BEAMSNOBES MJ; WEBB RP; CARTER G et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 133-138; BIBL. 14 REF.Article
THE DEVELOPMENT OF A GENERAL THREE-DIMENSIONAL SURFACE UNDER ION BOMBARDMENTSMITH R; WALLS JM.1980; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1980; VOL. 42; NO 2; PP. 235-248; BIBL. 23 REF.Article
OHMIC CONTACTS TO GAAS LASERS USING ION-BEAM TECHNOLOGYLINDSTROM C; TIHANYI P.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 1; PP. 39-44; BIBL. 18 REF.Article
ION SPUTTERING OF MINERALS AND GLASSES: A FIRST STEP TO THE SIMULATION OF SOLAR WIRD EROSIONTHIEL K; SASSMANNSHAUSEN U; KUELZER H et al.1982; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1982; VOL. 64; NO 1-4; PP. 83-88; BIBL. 18 REF.Article
ION BEAM SPUTTERING: AN IMPROVED METHOD OF METAL COATING SEM SAMPLES AND SHADOWING CTEM SAMPLESCLAY CS; PEACE GW.1981; J. MICROSC. (OXF.); ISSN 0022-2720; GBR; DA. 1981; VOL. 123; NO 1; PP. 25-34; BIBL. 17 REF.Article
THE EFFECT OF ION INDUCED ROUGHNESS ON THE DEPTH RESOLUTION OF AUGER SPUTTER PROFILING OF MNOS DEVICESADACHI T; HELMS CR.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 1; PP. 119; BIBL. 3 REF.Article
MULTI-APERTURE ION SOURCE WITH A DEFLECTABLE FOCUSED BEAM FOR COMPOSITIONAL CONTROL IN SPUTTER DEPOSITIONSMITS JW.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 3; PP. 704-708; BIBL. 11 REF.Article
A FIRST ORDER DIFFUSION APPROXIMATION TO ATOMIC REDISTRIBUTION DURING ION BOMBARDMENT OF SOLIDS. I: INFINITE RANGE APPROXIMATIONCOLLINS R; CARTER G.1981; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1981; VOL. 54; NO 3-4; PP. 235-242; BIBL. 37 REF.Article
ION KNOCK-ON BROADENING EFFECTS IN AUGER SPUTTER PROFILING STUDIES OF ULTRATHIN SIO2 LAYERS ON SITAUBENBLATT MA; HELMS CR.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2667-2671; BIBL. 13 REF.Article
AES INVESTIGATIONS OF AR+ ION RETENTION IN SI DURING AR SPUTTERING.KEMPF J.1978; APPL. PHYS.; GERM.; DA. 1978; VOL. 16; NO 1; PP. 43-46; BIBL. 15 REF.Article
STOSSKASKADENUNTERSUCHUNGEN IN FESTKOERPERN MIT HILFE DER TRANSMISSIONSZERSTAEUBUNG DUENNER FOLIEN. = ETUDES DES CASCADES DE COLLISION DANS LES SOLIDES AU MOYEN DE LA PULVERISATION PAR TRANSMISSION DE COUCHES MINCESBAY HL; ANDERSEN HH; HOFER WO et al.1977; VAKUUM-TECH.; DTSCH.; DA. 1977; VOL. 26; NO 3; PP. 81-84; ABS. ANGL. FR.; BIBL. 10 REF.Article
THERMAL FACETING OF (110) AND (111) SURFACES OF MGO.HENRICH VE.1976; SURF. SCI.; NETHERL.; DA. 1976; VOL. 57; NO 1; PP. 385-392; BIBL. 11 REF.Article
ION SPUTTERING IN THE SURFACE ANALYSIS OF PRACTICAL SURFACESKEENLYSIDE M; STOTT FH; WOOD GC et al.1983; SURFACE AND INTERFACE ANALYSIS; ISSN 0142-2421; GBR; DA. 1983; VOL. 5; NO 2; PP. 64-70; BIBL. 8 REF.Article
XPS STUDY OF ALPHA QUARTZ SURFACEGOERLICH E; HABER J; STOCH A et al.1980; J. SOLID STATE CHEM.; GBR; DA. 1980; VOL. 33; NO 1; PP. 121-124; BIBL. 18 REF.Article
ETUDE DU PROCESSUS D'INTERACTION DES IONS DES GAZ CONTENANT DU FLUOR AVEC LA SURFACE DES VERRES OPTIQUESVISHNEVSKAYA LV; PERVEEV AF; CHEREZOVA LA et al.1981; OPT. MEH. PROM.; ISSN 0030-4042; SUN; DA. 1981; NO 7; PP. 30-32; BIBL. 4 REF.Article
RESISTANCE ELECTRIQUE ET STRUCTURE DES COUCHES DE HAFNIUM DETENUES DANS UNE DECHARGE A ELECTRONS OSCILLANTSKOZLOVSKIJ LV; REJKHRUDEL EH M; SMIRNITSKAYA GV et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 7; PP. 1448-1450; BIBL. 10 REF.Article
OBLIQUE INCIDENCE SPUTTERING OF TRIANGULAR MICROPROFILESVASILIU F.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 45; NO 3-4; PP. 213-217; BIBL. 11 REF.Article
BROAD BEAM ION SOURCE OPERATION WITH FOUR COMMON GASESPAK S; SITES JR.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 4; PP. 536-539; BIBL. 16 REF.Article
QUANTITATIVE ION IMPLANTATION: THEORETICAL ASPECTSGRIES WH.1979; INTERNATION. J. MASS SPECTROM. ION PHYS.; NLD; DA. 1979; VOL. 30; NO 2; PP. 97-112; BIBL. 37 REF.Article